Surface light emitting type semiconductor laser having a vertical cavity
文献类型：专利
| 作者 | SAI, HIRONOBU; ICHIHARA, JUN |
| 发表日期 | 2005-02-15 |
| 专利号 | US6856635 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface light emitting type semiconductor laser having a vertical cavity |
| 英文摘要 | A lower multilayer reflection film (2), a light emitting layer forming portion (6) and an upper multilayer reflection film (8) are sequentially formed on a substrate (1) to form a semiconductor laminated portion (9), and a current injection region A is formed at a part of the semiconductor laminated portion so as to emit light from the surface in the center thereof. And, according to the present invention, the current injection region A is formed so as to be deflected from a center of the substrate. As a result, there is provided a surface light emitting type semiconductor laser capable of monitoring a light emitting power correctly and controlling it automatically in order to achieve the constant light emitting power in a case where the surface light emitting type laser chip is used as a light source for a pickup or the like. |
| 公开日期 | 2005-02-15 |
| 申请日期 | 2002-10-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33819]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | SAI, HIRONOBU,ICHIHARA, JUN. Surface light emitting type semiconductor laser having a vertical cavity. US6856635. 2005-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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