Method of cleaving GaN/sapphire for forming laser mirror facets
文献类型：专利
| 作者 | AKKIPEDDI, RAMAM; LI, ZHONGLI; TRIPATHY, SUDHIRANJAN; CHUA, SOO JIN |
| 发表日期 | 2007-04-24 |
| 专利号 | US7208096 |
| 著作权人 | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of cleaving GaN/sapphire for forming laser mirror facets |
| 英文摘要 | A laser device has a substrate and at least one GaN-based layer upon a first surface of the substrate, and the laser device is cleaved by cutting linear grooves into a second surface of the substrate such that the grooves are in alignment with vertical planes of the substrate. The substrate and the at least one GaN-based layer are cleaved along the vertical planes. The cutting is performed using a laser beam from an external laser source. |
| 公开日期 | 2007-04-24 |
| 申请日期 | 2003-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33842]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
| 推荐引用方式 GB/T 7714 | AKKIPEDDI, RAMAM,LI, ZHONGLI,TRIPATHY, SUDHIRANJAN,et al. Method of cleaving GaN/sapphire for forming laser mirror facets. US7208096. 2007-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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