Method of crystallizing a semiconductor film using laser irradiation
文献类型：专利
| 作者 | TANAKA, KOICHIRO; NAKAYA, TOMOKO |
| 发表日期 | 2007-09-11 |
| 专利号 | US7268062 |
| 著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of crystallizing a semiconductor film using laser irradiation |
| 英文摘要 | There is provided an optical system for reducing faint interference observed when laser annealing is performed to a semiconductor film. The faint interference conventionally observed can be reduced by irradiating the semiconductor film with a laser beam by the use of an optical system using a mirror of the present invention. The optical system for transforming the shape of the laser beam on an irradiation surface into a linear or rectangular shape is used. The optical system may include an optical system serving to convert the laser beam into a parallel light with respect to a traveling direction of the laser beam. When the laser beam having passed through the optical system is irradiated to the semiconductor film through the mirror of the present invention, the conventionally observed faint interference can be reduced. Besides, the optical system which has been difficult to adjust can be simplified. |
| 公开日期 | 2007-09-11 |
| 申请日期 | 2005-03-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/33936]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 推荐引用方式 GB/T 7714 | TANAKA, KOICHIRO,NAKAYA, TOMOKO. Method of crystallizing a semiconductor film using laser irradiation. US7268062. 2007-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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