III-V group compound devices with improved efficiency and droop rate
文献类型：专利
| 作者 | LI, ZHEN-YU; LIN, HON-WAY; LIN, CHUNG-PAO; HSIA, HSING-KUO; KUO, HAO-CHUNG |
| 发表日期 | 2015-08-04 |
| 专利号 | US9099593 |
| 著作权人 | EPISTAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-V group compound devices with improved efficiency and droop rate |
| 英文摘要 | The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer. |
| 公开日期 | 2015-08-04 |
| 申请日期 | 2012-09-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34138]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | LI, ZHEN-YU,LIN, HON-WAY,LIN, CHUNG-PAO,et al. III-V group compound devices with improved efficiency and droop rate. US9099593. 2015-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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