Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
文献类型:专利
作者 | MORIWAKA, TOMOAKI |
发表日期 | 2014-05-27 |
专利号 | US8735186 |
著作权人 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
英文摘要 | The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer for homogenizing the energy distribution of the rectangular beam spot on the irradiated surface in a direction of its long or short side. The beam homogenizer includes an optical element having a pair of reflection planes provided oppositely for reflecting the laser beam in the direction where the energy distribution is homogenized and having a curved shape in its entrance surface. The entrance surface of the optical element means a surface of the optical element where the laser beam is incident first. |
公开日期 | 2014-05-27 |
申请日期 | 2013-12-10 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/34194] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
推荐引用方式 GB/T 7714 | MORIWAKA, TOMOAKI. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device. US8735186. 2014-05-27. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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