中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device

文献类型:专利

作者MORIWAKA, TOMOAKI
发表日期2014-05-27
专利号US8735186
著作权人SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
国家美国
文献子类授权发明
其他题名Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
英文摘要The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer for homogenizing the energy distribution of the rectangular beam spot on the irradiated surface in a direction of its long or short side. The beam homogenizer includes an optical element having a pair of reflection planes provided oppositely for reflecting the laser beam in the direction where the energy distribution is homogenized and having a curved shape in its entrance surface. The entrance surface of the optical element means a surface of the optical element where the laser beam is incident first.
公开日期2014-05-27
申请日期2013-12-10
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/34194]  
专题半导体激光器专利数据库
作者单位SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
推荐引用方式
GB/T 7714
MORIWAKA, TOMOAKI. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device. US8735186. 2014-05-27.

入库方式: OAI收割

来源:西安光学精密机械研究所

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