Semiconductor laser device and manufacturing method thereof
文献类型：专利
| 作者 | NISHIOKA, YOSHITO; MUGINO, YOICHI; NOMA, TSUGUKI |
| 发表日期 | 2017-02-07 |
| 专利号 | US9564738 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and manufacturing method thereof |
| 英文摘要 | A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer. |
| 公开日期 | 2017-02-07 |
| 申请日期 | 2015-11-04 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34283]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | NISHIOKA, YOSHITO,MUGINO, YOICHI,NOMA, TSUGUKI. Semiconductor laser device and manufacturing method thereof. US9564738. 2017-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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