Processing method of single-crystal substrate
文献类型：专利
| 作者 | MORIKAZU, HIROSHI; TAKEDA, NOBORU; SHOTOKUJI, TAKUMI |
| 发表日期 | 2018-10-16 |
| 专利号 | US10103061 |
| 著作权人 | DISCO CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Processing method of single-crystal substrate |
| 英文摘要 | Disclosed herein is a processing method of a single-crystal substrate having a film formed on a front side or a back side thereof to divide the single-crystal substrate along a plurality of preset division lines. The method includes a film removing step of removing the film along the division lines, a shield tunnel forming step of applying a pulsed laser beam having a wavelength which permeates through the single-crystal substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines, and dividing step of exerting an external force on the single-crystal substrate to which the shield tunnel forming step is performed to divide the single-crystal substrate along the division lines. |
| 公开日期 | 2018-10-16 |
| 申请日期 | 2016-03-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34300]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | DISCO CORPORATION |
| 推荐引用方式 GB/T 7714 | MORIKAZU, HIROSHI,TAKEDA, NOBORU,SHOTOKUJI, TAKUMI. Processing method of single-crystal substrate. US10103061. 2018-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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