中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Testing method of surface-emitting laser device and testing device thereof

文献类型:专利

作者HIRAIWA, KOJI; KAGEYAMA, TAKEO; IWAI, NORIHIRO; TAKAKI, KEISHI
发表日期2012-05-15
专利号US8178364
著作权人FURUKAWA ELECTRIC CO., LTD.
国家美国
文献子类授权发明
其他题名Testing method of surface-emitting laser device and testing device thereof
英文摘要A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.
公开日期2012-05-15
申请日期2010-06-08
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/34521]  
专题半导体激光器专利数据库
作者单位FURUKAWA ELECTRIC CO., LTD.
推荐引用方式
GB/T 7714
HIRAIWA, KOJI,KAGEYAMA, TAKEO,IWAI, NORIHIRO,et al. Testing method of surface-emitting laser device and testing device thereof. US8178364. 2012-05-15.

入库方式: OAI收割

来源:西安光学精密机械研究所

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