半導体レーザの高周波応答特性測定装置
文献类型：专利
| 作者 | 村田 茂 |
| 发表日期 | 1999-03-19 |
| 专利号 | JP2900529B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの高周波応答特性測定装置 |
| 英文摘要 | PURPOSE:To measure the response characteristic of a semiconductor laser to be measured to high-frequency modulation free from a stray capacity by providing a wavelength filter which separates light to be measured emitted from the laser from pump light, photoreceptor which receives the separated light to be measured, and measuring system which measures the ratio between an electric signal from the photoreceptor and modulating signal used for generating modulation pump light. CONSTITUTION:Both of the light to be measured emitted from a semiconductor laser 10 to be measured and reflected pump light are impinged on a wavelength filter 50 after passing through a half-mirror 30 and isolator 9 The filter 50 cuts off the pump light and transmits the light to be measured only to a photoreceptor 70. An electric signal from the photoreceptor 70 is inputted to the port 2 of a network analyzer 80 and used for the measurement of the high-frequency response characteristic of the light to be measured. The analyzer 80 is corrected by using the value obtained when the modulated pump light is directly impinged on the photorecephtor 70 as a reference. The high-frequency characteristic of the quantum well semiconductor laser at the time of intensity modification can be measured to a high-frequency region of >= 20 GHz without receiving any influence from a stray capacity of mount, etc. |
| 公开日期 | 1999-06-02 |
| 申请日期 | 1990-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34555]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 村田 茂. 半導体レーザの高周波応答特性測定装置. JP2900529B2. 1999-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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