High performance ZnO-based laser diodes
文献类型：专利
| 作者 | LIU, JIANLIN; CHU, SHENG |
| 发表日期 | 2012-11-06 |
| 专利号 | US8306083 |
| 著作权人 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High performance ZnO-based laser diodes |
| 英文摘要 | Systems and methods for electrically pumped, surface-emitting and edge emitting ZnO ultraviolet diode lasers are disclosed. The ZnO diode laser may be fabricated using growth processes (e.g., MBE) to form Sb-doped ZnO as a p-type layer and doped ZnO as an n-type layer. ZnO-based quantum well structures may be further formed in between the n- and p-type ZnO layers. The ZnO layers and quantum wells may be grown in columnar structures which act as resonant cavities for generated light, significantly improving light amplification and providing high power output. For example, ultraviolet lasing at around 380 nm was demonstrated at about room temperature at a threshold current density of about 10 A/cm2. The output power was further measured to be about 13 μW at about 130 mA driving current. |
| 公开日期 | 2012-11-06 |
| 申请日期 | 2009-09-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34603]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE |
| 推荐引用方式 GB/T 7714 | LIU, JIANLIN,CHU, SHENG. High performance ZnO-based laser diodes. US8306083. 2012-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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