GaAs-GaAlAs semiconductor having a periodic corrugation at an interface
文献类型：专利
| 作者 | AIKI, KUNIO; NAKAMURA, MICHIHARU; UMEDA, JUNICHI |
| 发表日期 | 1978-02-14 |
| 专利号 | US4073676 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | GaAs-GaAlAs semiconductor having a periodic corrugation at an interface |
| 英文摘要 | A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700 DEG C. to the corrugated surface of the GaAs layer and cooling the solution to a temperature of about 670 DEG C. at a cooling rate of 5 DEG C./min. whereby the periodic corrugation is not transfigured so much. |
| 公开日期 | 1978-02-14 |
| 申请日期 | 1975-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34682]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | AIKI, KUNIO,NAKAMURA, MICHIHARU,UMEDA, JUNICHI. GaAs-GaAlAs semiconductor having a periodic corrugation at an interface. US4073676. 1978-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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