Semiconductor diode laser
文献类型：专利
| 作者 | KAPPELER, FRANZ |
| 发表日期 | 1986-10-28 |
| 专利号 | US4620307 |
| 著作权人 | SIEMENS AKTIENGESELLSCHAFT |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor diode laser |
| 英文摘要 | A semiconductor diode laser for tunable single-frequency laser radiation has a plurality of laser-active strips associated with a semiconductor body having first and second reflective end surfaces. The first end surface has laser radiation emitted and coupled out therefrom. One of the strips is an emitting laser-active strip which emits the laser radiation and the further laser-active strips are provided at both sides of the emitting strip. The further strips are shorter than the emitting strip and are provided such that respective resonators corresponding to each strip are provided with mirrors or reflectors at both ends thereof. A first end of the strips terminates in front of the first end face of the semiconductor body. |
| 公开日期 | 1986-10-28 |
| 申请日期 | 1985-01-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SIEMENS AKTIENGESELLSCHAFT |
| 推荐引用方式 GB/T 7714 | KAPPELER, FRANZ. Semiconductor diode laser. US4620307. 1986-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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