光増幅装置及びその製造方法
文献类型：专利
| 作者 | 茂木 直人 |
| 发表日期 | 1994-05-18 |
| 专利号 | JP1994038534B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光増幅装置及びその製造方法 |
| 英文摘要 | PURPOSE:To obtain an optical amplifier, which maintains a stable transverse mode even on a high output and provided with reduced noises, by bonding a plate-shaped semiconductor with a P-N junction and a plate body transparent to the luminous wavelength of the crystal of the semiconductor in a clean atmosphere and thermally treating and joining the semiconductor and the plate body. CONSTITUTION:Active layers 13 consisting of Ga0.08Al0.12As are held by P-type Ga0.65Al0.35As layers 12 and N-type Ga0.65Al0.35As layers 11, thus forming a plate crystal having double hetero-structure. The hetero-structures are held by low-resistance N-type GaP crystals 14 and P-type GaP crystals 15, a plurality of these structures and crystals are stacked, and beams are projected vertically from one surfaces of P-N junctions and emitted vertically from the other surfaces. The bonding and joining of the layers 13, 12 and 13, 11 are extremely important at that time, the roughness of the rough surfaces of these surfaces are brought to 500Angstrom or less, and these surfaces are etched slightly by a mixed liquid of H2O2 and H2SO4, washed sufficiently and pressed and bonded at a temperature of 100 deg.C or lower. Accordingly, incident coherent beams are spatially spread sufficiently. |
| 公开日期 | 1994-05-18 |
| 申请日期 | 1985-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34771]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 茂木 直人. 光増幅装置及びその製造方法. JP1994038534B2. 1994-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。