Window VSIS semiconductor laser
文献类型：专利
| 作者 | YANO, SEIKI; YAMAMOTO, SABURO; HAYASHI, HIROSHI; MORIMOTO, TAIJI |
| 发表日期 | 1987-08-11 |
| 专利号 | US4686679 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Window VSIS semiconductor laser |
| 英文摘要 | A window VSIS semiconductor laser includes a stimulated region and window regions formed on both ends of the stimulated region. A V-shaped groove is formed in a substrate, and an active layer is formed on the substrate. In one preferred form, the V-shaped groove has a wider width in the stimulated region as compared with the V-shaped groove formed in the window regions. The active layer is a crescent active layer in the stimulated region. One edge of the V-shaped groove in the stimulated region is continuously aligned on a line to the corresponding edge of the V-shaped groove formed in the window regions so as to enhance the optical coupling. In another preferred form, indents are formed in the substrate in the window regions in a manner to sandwich the V-shaped groove formed in the window regions. The V-shaped groove has the same width in the stimulated region and in the window regions. The active layer is plane shaped in the stimulated region, and a thickness of the active layer in the stimulated region is thicker than the active layer formed in the window regions. |
| 公开日期 | 1987-08-11 |
| 申请日期 | 1985-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34774]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YANO, SEIKI,YAMAMOTO, SABURO,HAYASHI, HIROSHI,et al. Window VSIS semiconductor laser. US4686679. 1987-08-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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