半導体発光素子
文献类型：专利
| 作者 | 福沢 董; 山田 栄三郎; 比留間 健之; 松村 宏善 |
| 发表日期 | 1995-02-08 |
| 专利号 | JP1995012100B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光素子 |
| 英文摘要 | PURPOSE:To make the width of spectrum narrow by recombining electrons and holes while controlling them artificially through a barrier layer. CONSTITUTION:A barrier layer 1 which separates electrons 6 and holes 7 spatially is arranged in a laser active layer. By applying an electric field from the outside, the electrons 6 injected in an active layer 2 and the holes 7 near the barrier layer 1 among the holes 7 injected in an active layer 3 are attracted mutually by a Coulomb force and become excitons. When Bose condensation is caused by cooling the device to a low-temperature, the electrons and holes near the barrier form pairs successively and the light emission from the excitons of high plane density and uniform phase can be obtained. |
| 公开日期 | 1995-02-08 |
| 申请日期 | 1985-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34775]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 福沢 董,山田 栄三郎,比留間 健之,等. 半導体発光素子. JP1995012100B2. 1995-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。