中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Single contact tailored gain chirped arrays of diode lasers for supermode control with single-lobed farfield patterns

文献类型:专利

作者LINDSEY, CHRISTOPHER P.; KAPON, ELYAHOU; KATZ, JOSEPH; MARGALIT, SHLOMO; YARIV, AMNON
发表日期1988-01-12
专利号US4719632
著作权人CALIFORNIA INSTITUTE OF TECHNOLOGY, 1201 E. CALIFORNIA BLV., PASADENA, CA. 91125, A CORP. OF
国家美国
文献子类授权发明
其他题名Single contact tailored gain chirped arrays of diode lasers for supermode control with single-lobed farfield patterns
英文摘要An array of nonuniform semiconductor diode lasers with supermode control for achieving a single-lobed farfield pattern is described. This is accomplished by spatially segregating the fundamental supermode from the other supermodes, tailoring the spatial gain profile as as to favor the fundamental supermode, and sufficiently increasing the intechannel coupling so as to bring about single-lobed farfield operation. In a preferred embodiment, this is achieved in a shallowly proton implanted, tailored gain, chirped laser array in which the widths of the lasers are varied linearly across the array.
公开日期1988-01-12
申请日期1985-06-19
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/34778]  
专题半导体激光器专利数据库
作者单位CALIFORNIA INSTITUTE OF TECHNOLOGY, 1201 E. CALIFORNIA BLV., PASADENA, CA. 91125, A CORP. OF
推荐引用方式
GB/T 7714
LINDSEY, CHRISTOPHER P.,KAPON, ELYAHOU,KATZ, JOSEPH,et al. Single contact tailored gain chirped arrays of diode lasers for supermode control with single-lobed farfield patterns. US4719632. 1988-01-12.

入库方式: OAI收割

来源:西安光学精密机械研究所

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