Single contact tailored gain chirped arrays of diode lasers for supermode control with single-lobed farfield patterns
文献类型:专利
作者 | LINDSEY, CHRISTOPHER P.; KAPON, ELYAHOU; KATZ, JOSEPH; MARGALIT, SHLOMO; YARIV, AMNON |
发表日期 | 1988-01-12 |
专利号 | US4719632 |
著作权人 | CALIFORNIA INSTITUTE OF TECHNOLOGY, 1201 E. CALIFORNIA BLV., PASADENA, CA. 91125, A CORP. OF |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Single contact tailored gain chirped arrays of diode lasers for supermode control with single-lobed farfield patterns |
英文摘要 | An array of nonuniform semiconductor diode lasers with supermode control for achieving a single-lobed farfield pattern is described. This is accomplished by spatially segregating the fundamental supermode from the other supermodes, tailoring the spatial gain profile as as to favor the fundamental supermode, and sufficiently increasing the intechannel coupling so as to bring about single-lobed farfield operation. In a preferred embodiment, this is achieved in a shallowly proton implanted, tailored gain, chirped laser array in which the widths of the lasers are varied linearly across the array. |
公开日期 | 1988-01-12 |
申请日期 | 1985-06-19 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/34778] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | CALIFORNIA INSTITUTE OF TECHNOLOGY, 1201 E. CALIFORNIA BLV., PASADENA, CA. 91125, A CORP. OF |
推荐引用方式 GB/T 7714 | LINDSEY, CHRISTOPHER P.,KAPON, ELYAHOU,KATZ, JOSEPH,et al. Single contact tailored gain chirped arrays of diode lasers for supermode control with single-lobed farfield patterns. US4719632. 1988-01-12. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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