ハイブリッド光IC装置およびその製造方法
文献类型：专利
| 作者 | 木村 壮一; 大仲 清司 |
| 发表日期 | 1995-01-11 |
| 专利号 | JP1995001794B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | ハイブリッド光IC装置およびその製造方法 |
| 英文摘要 | PURPOSE:To prevent the increase of the wiring capacity due to wire bonding connection by carrying out a wiring step for an IC wafer after dice-bonding a light emitting element in a hole which is formed selectively in a region other than the region in which an electric element has been formed on the IC wafer. CONSTITUTION:A hole 7 is formed selectively in a region other than the region in which an electric element has been formed, on an Si-IC wafer After forming the hole 7, the first wiring metal 3 is formed selectively in the regions where the hole 7 and the electric element are formed. After that, a semiconductor laser 2 is dice-bonded on the wiring metal 3 formed in the hole 7. For example, a solder layer is formed on the N-side electrode 9 of the semiconductor laser 2 and the bonding is made by using the solder layer on the heated wafer to fill the space between the semiconductor laser 2 and the hole 7 with resin 5. The resin on one end side of the semiconductor laser 2 is removed in order to take out the light emitted from the other end of the semiconductor laser 2 to the outside. A wiring metal 6 is formed selectively in the region where a P-side electrode 8 of the semiconductor laser 2 and the electric element are formed. |
| 公开日期 | 1995-01-11 |
| 申请日期 | 1985-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34781]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 木村 壮一,大仲 清司. ハイブリッド光IC装置およびその製造方法. JP1995001794B2. 1995-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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