Optical memory device comprising a semiconductor laser having bistability and two injection current sources for individually controlling the bistability
文献类型：专利
| 作者 | NAGASHIMA, KUNIO |
| 发表日期 | 1988-05-31 |
| 专利号 | US4748630 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical memory device comprising a semiconductor laser having bistability and two injection current sources for individually controlling the bistability |
| 英文摘要 | In an optical memory device comprising a bistable semiconductor laser having two coplanar electrodes (26, 27) injection current sources (31, 32) for the respective electrodes are individually adjusted to make the laser selectively latch first and second optical input signals (P1, P2). It is possible to provide an optical master-slave flip-flop device by optically directly coupling two optical memory devices of the type described to each other in tandem. Furthermore, an optical signal shifting device can be provided by arranging, optically in tandem, a plurality of optical master-slave flip-flop devices of the type described. |
| 公开日期 | 1988-05-31 |
| 申请日期 | 1986-01-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34790]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | NAGASHIMA, KUNIO. Optical memory device comprising a semiconductor laser having bistability and two injection current sources for individually controlling the bistability. US4748630. 1988-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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