半導体レ-ザの波長制御方法
文献类型：专利
| 作者 | 長谷川 信也; 池田 弘之; 北川 俊二; 山岸 文雄 |
| 发表日期 | 1996-03-06 |
| 专利号 | JP1996024203B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの波長制御方法 |
| 英文摘要 | PURPOSE:To obtain the same mode (a wavelength) stably by freely setting the temperature of a semiconductor laser and bringing the temperature of the semiconductor laser to a temperature lower than or higher than a fixed set temperature once and shifting it to the set temperature on the temperature setting. CONSTITUTION:In a control method for the wavelength of a semiconductor laser controlling the temperature of the semiconductor laser and acquiring the wavelength of output beams corresponding to the temperature of the semiconductor laser, the temperature of the semiconductor laser is brought to a temperature lower than or higher than a fixed set temperature once, and shifted to the set temperature. When the mode (a wavelength) of the semiconductor laser LD is set, a temperature T0 corresponding to a desired mode is set by a temperature setting circuit 6. When a power switch is closed, a timer circuit 5 starts its operation, and the temperature setting circuit 6 transmits a signal for bringing the temperature of the semiconductor laser LD to a temperature T1 lower than the set temperature T0 over a temperature control circuit 7 during the operation of the timer circuit 5. The temperature control circuit 7 works a Peltier element 2 on the basis of the signal, and brings the temperature of the semiconductor laser Ld to said temperature T |
| 公开日期 | 1996-03-06 |
| 申请日期 | 1986-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34795]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 長谷川 信也,池田 弘之,北川 俊二,等. 半導体レ-ザの波長制御方法. JP1996024203B2. 1996-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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