半導体レーザ
文献类型：专利
| 作者 | 田中 治夫; 中田 直太郎; 村西 正好; 宅間 裕晃 |
| 发表日期 | 1997-07-04 |
| 专利号 | JP2669502B2 |
| 著作权人 | ローム 株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To simplify a die bonding of a laser chip to a substrate and to enhance the strength thereof by forming an auxiliary insulating film substantially in the same thickness as that of the insulating film of a monitor photodiode at the position of a laser beam irradiating surface. CONSTITUTION:An auxiliary insulating film 8 having the same quality as that of an insulating film 4 and substantially the same thickness is formed at a position separated from the film 4 in a die bonding unit 5. A laser chip 1 is so placed on the upper surface of the unit 5 that part of the chip 1 at the side of a monitor laser beam irradiating surface 1c is superposed through the film 4 on a semiconductor layer 2b of a photodiode 3 and part of the laser beam irradiating side 1b rides on the film 8, and the chip 1 is die bonded with a material 6 in this state. Accordingly, the chip 1 is placed at the irradiating side 1c on the film 4, and at the laser irradiating surface 1b on the film 8, thereby effectively preventing the chip 1 from inclining. |
| 公开日期 | 1997-10-29 |
| 申请日期 | 1987-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34816]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ローム 株式会社 |
| 推荐引用方式 GB/T 7714 | 田中 治夫,中田 直太郎,村西 正好,等. 半導体レーザ. JP2669502B2. 1997-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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