マルチビーム半導体レーザ装置
文献类型：专利
| 作者 | 瀬古 保次; 上柳 喜一; 中山 秀生; 福永 秀樹 |
| 发表日期 | 1998-08-28 |
| 专利号 | JP2819593B2 |
| 著作权人 | 富士ゼロックス株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | マルチビーム半導体レーザ装置 |
| 英文摘要 | PURPOSE:To facilitate assemblage and prevent the output of laser beams from decreasing with the passage of time by installing radiator-side bonding pad parts connected to wiring parts on corresponding parts to bonding pad parts on a junction face with a multi-beam semiconductor laser element. CONSTITUTION:Radiator-side bonding pad parts 51-54 connected to wiring parts 61-64 are installed on corresponding parts to bonding pad parts on a junction face with the multi-beam semiconductor laser element 2 of a radiator 3. Therefore, though the independent drive electrodes of the multi-beam semiconductor laser element 2 are fine, the independent drive electrodes and the wiring parts 61-64 on the radiator 3 can be surely connected and heat energy generated in an active layer is released from the radiator 3 through the independent drive electrodes to surely prevent the active layer from heating. Thereby the output of laser beams does not decrease with the passage of time and a device can be made easily. |
| 公开日期 | 1998-10-30 |
| 申请日期 | 1989-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士ゼロックス株式会社 |
| 推荐引用方式 GB/T 7714 | 瀬古 保次,上柳 喜一,中山 秀生,等. マルチビーム半導体レーザ装置. JP2819593B2. 1998-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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