半導体レーザアレイ装置
文献类型：专利
| 作者 | 粂 雅博; 内藤 浩樹; 永井 秀男 |
| 发表日期 | 1996-08-22 |
| 专利号 | JP2554741B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザアレイ装置 |
| 英文摘要 | PURPOSE:To obtain continuous oscillation by placing a two-dimensional semiconductor array, wherein plural pieces of one-dimensional semiconductor arrays are placed in layer shape between insulating plates excellent in heat conductivity, on a heat radiating member through the insulating plates. CONSTITUTION:Plural pieces of one-dimensional semiconductor arrays 1 are placed in layer shape between insulating plates 2 excellent in heat conductivity so as to constitute a two-dimensional semiconductor laser array 4, and this two-dimensional semiconductor laser array 4 is placed on a heat radiating member 5 through the insulating plates 2. For the material of the insulating plates 2, BN is used which is almost the same as GaAs being laser crystals in point of cost and in heat expansion coefficient. Hereby, the heat generated from the one-dimensional semiconductor laser array 1 is transmitted to the heat radiating member 5 through the insulating plate 2 excellent in heat conductivity, and heat radiation is performed enough, and the temperature rise of the semiconductor laser array device is suppressed, and also continuous oscillation becomes possible. |
| 公开日期 | 1996-11-13 |
| 申请日期 | 1989-04-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34877]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 粂 雅博,内藤 浩樹,永井 秀男. 半導体レーザアレイ装置. JP2554741B2. 1996-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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