光集積回路およびその製作法
文献类型：专利
| 作者 | 宮澤 丈夫; 三上 修; 永沼 充 |
| 发表日期 | 1997-08-08 |
| 专利号 | JP2683099B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光集積回路およびその製作法 |
| 英文摘要 | PURPOSE:To enable a photodetector and a laser different from each other in operating wavelength to be monolithically integrated together by a method wherein the photodetective layer of the photodetector and the active layer of a laser diode are coupled together, and the absorption end of the photodetective layer is made smaller than the emission wavelength of the laser diode. CONSTITUTION:A photodetective layer 9 of a photodetector 8 and an active layer 11 of a laser diode 10 are coupled together, and the absorption end of the photodetective layer 9 of the photodetector 8 is so set as to be smaller than the emission wavelength of the laser diode 10, and the end face 12 of the photodetector 8 side is used as the output and the input face of a transmitting and a receiving light. Therefore, light generated from the laser diode 10 section is radiated without being absorbed inside the photodetector 8, and on the other hand, when light whose wavelength is shorter than the absorption end of the photodetective layer 9 is incident the photodetector 9 detects the light concerned, and the light is thoroughly absorbed by a light absorbing layer 9 so as not to disturb a laser oscillation state. By this setup, an optical integrated circuit composed of the photodetector 8 and the laser diode 10 monolithically integrated together can be obtained. |
| 公开日期 | 1997-11-26 |
| 申请日期 | 1989-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34879]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 宮澤 丈夫,三上 修,永沼 充. 光集積回路およびその製作法. JP2683099B2. 1997-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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