半導体光素子および光通信システム
文献类型：专利
| 作者 | 魚見 和久; 大歳 創; 土屋 朋信; 佐々木 真二; 茅根 直樹 |
| 发表日期 | 1999-02-19 |
| 专利号 | JP2889594B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体光素子および光通信システム |
| 英文摘要 | PURPOSE:To enable emitted light intensity modulation of a quantum well by application of an electric field, by providing at least a couple of current-injecting electrodes that are able to inject carriers into a distorted superlattice type quantum well layer, and electric-field-applying electrodes that apply an electric field in the lamination direction of the distorted superlattice type quantum well layer. CONSTITUTION:An active layer has at least one quantum well layer 2 whose film is as thick as the de Broglie wavelength of electron or below, and the lattice constants of the quantum well layer 2 are different from those of the adjacent barrier layers 4, 5. Namely, it has a distorted superlattice type quantum well structure, and has at least a couple of current-injection electrodes 6, 7 that are able to inject carriers into the distorted superlattice type quantum well layer 2, and electric-field-applying electrodes 8, 9 that apply an electric field in the lamination direction of the distorted superlattice type quantum well layer 2. The quantum condition is changed by applying an electric field to the distorted quantum well. This enables emitted light intensity modulation of the quantum well by applying an electric field. |
| 公开日期 | 1999-05-10 |
| 申请日期 | 1989-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34886]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 魚見 和久,大歳 創,土屋 朋信,等. 半導体光素子および光通信システム. JP2889594B2. 1999-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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