Integrated semiconductor diode laser and photodiode structure
文献类型：专利
| 作者 | BUCHMANN, PETER LEO, DR.; HARDER, CHRISTOPH STEPHAN, DR.; VOEGELI, OTTO, DR. |
| 发表日期 | 1993-09-22 |
| 专利号 | EP0410067B1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated semiconductor diode laser and photodiode structure |
| 英文摘要 | Integrated semiconductor structure with optically coupled laser diode (11) and photodiode (12A), both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability. |
| 公开日期 | 1993-09-22 |
| 申请日期 | 1989-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | BUCHMANN, PETER LEO, DR.,HARDER, CHRISTOPH STEPHAN, DR.,VOEGELI, OTTO, DR.. Integrated semiconductor diode laser and photodiode structure. EP0410067B1. 1993-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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