Semiconductor laser device and a method of producing same
文献类型：专利
| 作者 | NAGAI, SEIICHI; ISHII, MITSUO; HASEGAWA, KAZUYOSHI |
| 发表日期 | 1991-02-26 |
| 专利号 | US4995687 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA, |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and a method of producing same |
| 英文摘要 | A semiconductor laser device and method of producing the same in which a laser diode chip is mounted on a stem via a heat sink. The cap is fixed to the stem covering the chip and includes a penetrating aperture, a lens for collimating light from the chip into penetrating aperture, and an optical fiber for guiding the collimated light which is fixed to the penetrating aperture after insertion to a desired depth. |
| 公开日期 | 1991-02-26 |
| 申请日期 | 1989-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34897]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA, |
| 推荐引用方式 GB/T 7714 | NAGAI, SEIICHI,ISHII, MITSUO,HASEGAWA, KAZUYOSHI. Semiconductor laser device and a method of producing same. US4995687. 1991-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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