Method of forming a silicon-based semiconductor optical device mount
文献类型：专利
| 作者 | DIETRICH, NORMAN R.; MOYER, RALPH S.; WONG, YIU-HUEN |
| 发表日期 | 1991-06-18 |
| 专利号 | US5024966 |
| 著作权人 | AT&T BELL LABORATORIES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of forming a silicon-based semiconductor optical device mount |
| 英文摘要 | A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser, and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips are coupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance ZL, and a stripline designed to have an impedance ZS, the resistance R is chosen such that R+ZL=ZS. Utilizing silicon processing techniques, the thin film resistor may be placed adjacent to the laser, reducing the parasitics associated with their interconnection. A conductive via is formed through the substrate to provide a top-side bonding location for connecting the optical device to the bottom metal conductor by providing the top-side site, the parasitic inductance associated with this interconnection is considerably reduced. |
| 公开日期 | 1991-06-18 |
| 申请日期 | 1990-04-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34908]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T BELL LABORATORIES |
| 推荐引用方式 GB/T 7714 | DIETRICH, NORMAN R.,MOYER, RALPH S.,WONG, YIU-HUEN. Method of forming a silicon-based semiconductor optical device mount. US5024966. 1991-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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