集積回路の製造方法
文献类型：专利
| 作者 | 松田 薫; 成沢 忠 |
| 发表日期 | 1996-04-16 |
| 专利号 | JP2512218B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 集積回路の製造方法 |
| 英文摘要 | PURPOSE:To reduce the weight and size of an element by implanting magnetic ions in a group II-VI compound semiconductor such as ZnSe, etc., and forming a region made of a thin rare magnetic semiconductor. CONSTITUTION:An ZnSe substrate 1 is employed as a group II-VI compound semiconductor, and masked with a mask 2 except a part. Then, Mn ions 3 are implanted in dose of about 10 per 1cm at a predetermined acceleration voltage. After the mask 2 is removed, it is annealed at about 1000 deg.C in a momentarily heating lamp annealing furnace for 10min, and the substrate 1 is partly formed of ZnMeSe 4 of a thin rare magnetic semiconductor region. Thus, optical loss at the time of coupling can be reduced, and high reliability can be obtained. |
| 公开日期 | 1996-07-03 |
| 申请日期 | 1990-08-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34920]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 松田 薫,成沢 忠. 集積回路の製造方法. JP2512218B2. 1996-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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