半導体レーザの製造方法
文献类型：专利
| 作者 | 廣山 良治; 浜田 弘喜 |
| 发表日期 | 1999-04-23 |
| 专利号 | JP2919606B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To manufacture a cap layer without high temperature growth and to improve heat dissipating characteristic when a junction down method is used by etching the surface of a block layer with isotropic etchant before the cap layer is formed. CONSTITUTION:Before a cap layer 9 is formed, the surface of a block layer 8 is etched with isotropic etchant having small surface azimuth dependency with an SiO3 film 14 as a mask. After the film 14 at the top of a ridge 7 is removed, the layer 9 made of p-type GaAs is formed on an exposed protective layer 13 and the layer 8 by a low-pressure MOCVD method. In this case, the surface of the layer 9 becomes smooth by reflecting the shape of the surface of the layer 8 becoming smooth, and the step of a recess 12 above the ridge 7 is further reduced. When a junction down method is used, an electrode 10 formed on the surface of the cap layer can be brought into contact with melted metal in high yield, heat dissipating characteristic of an element is improved, and reliability of the element is improved. |
| 公开日期 | 1999-07-12 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34929]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 廣山 良治,浜田 弘喜. 半導体レーザの製造方法. JP2919606B2. 1999-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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