微小共振器発光素子
文献类型：专利
| 作者 | 笠原 健一 |
| 发表日期 | 1996-03-13 |
| 专利号 | JP2500525B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 微小共振器発光素子 |
| 英文摘要 | PURPOSE:To obtain a microscopic resonator light emitting element which is stable against a returning light and does not generate excess noise by forming an active layer at a position of an antinode of a standing wave stood in a resonator, and forming the layer of a specified thickness. CONSTITUTION:An In0.2Ga0.8As quantum well layer 104 to become an active layer having 50Angstrom of thickness is buried between Al0.2Ga0.8As layers 105 and 106 having about 2500Angstrom of thickness. Further, distributed reflecting mirrors made of lambda/4 films of AlAs layers 102, 107 and Al0.2Ga0.8As layers 103, 108 are formed at both sides thereof. Accordingly, the thickness of the layer 104 becomes 1/50 of a wavelength in a medium, and a gain coupling type DBR element is obtained, and hence it becomes strong against returned light. |
| 公开日期 | 1996-05-29 |
| 申请日期 | 1990-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 笠原 健一. 微小共振器発光素子. JP2500525B2. 1996-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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