Optical device with an asymmetric dual quantum well structure
文献类型：专利
| 作者 | FUJII, KAZUHITO, C/O CANON KABUSHIKI KAISHA; ONO, TAKEO, C/O CANON KABUSHIKI KAISHA |
| 发表日期 | 1997-07-23 |
| 专利号 | EP0483687B1 |
| 著作权人 | CANON KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical device with an asymmetric dual quantum well structure |
| 英文摘要 | An optical device includes an asymmetric dual quantum well (ADQW) structure which is comprised of a plur ality(at least two) of different semiconductor quantum well layers coupled to each other. In the ADQW structure, the width of a deeper quantum well layer (42) having a narrower band gap is made narrower than that of a less deeper quantum well layer (41) having a wider band gap such that the shift of an exciton wavelength is scarcely caused due to the quantum confined Stark effect by the application of an electric field in a predetermined range. As a result, only a refractive index of the ADQW structure is changed, but an absorption factor is scarcely changed for a given range of wavelength by the application of the electric field. Further, there is provided a member for applying an electric field to the asymmetric dual quantum well structure. |
| 公开日期 | 1997-07-23 |
| 申请日期 | 1991-10-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | FUJII, KAZUHITO, C/O CANON KABUSHIKI KAISHA,ONO, TAKEO, C/O CANON KABUSHIKI KAISHA. Optical device with an asymmetric dual quantum well structure. EP0483687B1. 1997-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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