Solid-state blue laser device capable of producing a blue laser beam having high power
文献类型：专利
| 作者 | AMANO, SATORU |
| 发表日期 | 1993-06-22 |
| 专利号 | US5222088 |
| 著作权人 | HOYA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Solid-state blue laser device capable of producing a blue laser beam having high power |
| 英文摘要 | In a solid-state blue laser device for producing a blue laser beam having a waveband of blue spectral range that is represented by a specific wavelength of, for example, 0.45 mu m, the solid-state blue laser device comprises a semiconductor laser device for producing an excitation laser beam having an excitation wavelength of, for example, 0.8 mu m. Excited by the excitation laser beam, a self-frequency doubling crystal, such as NdxY1-xAl3(BO3)4 where x has a value selected between 0.005 and 0.04, both exclusive, produces a harmonic laser beam having a wavelength of a second harmonic thereof that is equal to the specific wavelength. The solid-state blue laser device thereby produces the harmonic laser beam as the blue laser beam. The solid-state blue laser device may further comprise a condensing lens for condensing, as a condensed laser beam, the excitation laser beam onto the self-frequency doubling crystal. In order to cool the self-frequency doubling crystal, a cooler may be mounted on the self-frequency doubling crystal. An outer mirror may be disposed adjacent to the self-frequency doubling crystal to produce the harmonic laser beam as the blue laser beam. A Q-switching element may be disposed between the self-frequency doubling crystal and the outer mirror. The self-frequency doubling crystal may be directly coupled to the semiconductor laser device to produce the blue laser beam having a single longitudinal mode of TEM00. |
| 公开日期 | 1993-06-22 |
| 申请日期 | 1991-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/34966]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HOYA CORPORATION |
| 推荐引用方式 GB/T 7714 | AMANO, SATORU. Solid-state blue laser device capable of producing a blue laser beam having high power. US5222088. 1993-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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