Multi-quantum well (MQW) structure laser diode/modulator integrated light source
文献类型：专利
| 作者 | TAKANO, SHINJI |
| 发表日期 | 1996-05-21 |
| 专利号 | US5519721 |
| 著作权人 | NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multi-quantum well (MQW) structure laser diode/modulator integrated light source |
| 英文摘要 | A multi-quantum well (MQW) structure type semiconductor integrated laser element is constituted by a laser diode section and an optical modulator section which is integrated with the laser diode section and which contains a multi-quantum well structure. The multi-quantum well structure of the optical modulator section is a coupled multi-quantum well structure in which quantum states of the quantum wells are coupled with one another, thereby forming mini-bands. The large amounts of carriers produced by absorption are quickly scattered and lost through the mini-bands thereby enabling the modulation in proportion to the intensity of the electric field for modulation. The MQW integrated semiconductor laser element thus obtained exhibits excellent modulation characteristics and provides high output, and can be fabricated at a low cost with a high production yield. |
| 公开日期 | 1996-05-21 |
| 申请日期 | 1994-03-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35040]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
| 推荐引用方式 GB/T 7714 | TAKANO, SHINJI. Multi-quantum well (MQW) structure laser diode/modulator integrated light source. US5519721. 1996-05-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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