Semiconductor optical devices and methods for fabricating semiconductor optical devices
文献类型：专利
| 作者 | TOHRU, TAKIGUCHI; KATSUHIKO, GOTO; HIROTAKA, KIZUKI |
| 发表日期 | 1997-11-05 |
| 专利号 | GB2292011B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical devices and methods for fabricating semiconductor optical devices |
| 英文摘要 | A semiconductor optical device includes a first semiconductor layer 4a, and a diffraction grating 5. The diffraction grating comprises portions of a superlattice layer grown on the first semiconductor layer and comprising alternatingly arranged second semiconductor layers 5a comprising a semiconductor material in which mass transport hardly occurs and third semiconductor layers 5b comprising a semiconductor material different from the material of the second semiconductor layers. The device further includes a fourth semiconductor layer, 4b grown on the diffraction grating by vapor phase deposition. In this structure, since the second semiconductor layers in which mass transport hardly occurs are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer.; Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision. A pair of masks defining a striped-shaped region of the wafer is used, the masks being of different widths, to form the groove in which the superlattice is grown. |
| 公开日期 | 1997-11-05 |
| 申请日期 | 1994-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35049]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TOHRU, TAKIGUCHI,KATSUHIKO, GOTO,HIROTAKA, KIZUKI. Semiconductor optical devices and methods for fabricating semiconductor optical devices. GB2292011B. 1997-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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