Semiconductor laser device and a method for the manufacture thereof
文献类型：专利
| 作者 | NAKATSUKA, SHINICHI; UCHIDA, KENJI; SAGAWA, MISUZU; KIKUCHI, SATORU |
| 发表日期 | 1997-03-04 |
| 专利号 | US5608750 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and a method for the manufacture thereof |
| 英文摘要 | A semiconductor laser device is provided which is designed to prevent end surface optical damage, thereby permitting an increase in the output of the semiconductor laser. To achieve this, an active layer at the light emitting end surface portion of the semiconductor laser device is recessed inwardly by a distance between 50 nm and 300 nm (depending on the amount of etching) from the end surfaces of the crystal layers lying on both sides of the active layer. The recess serves to improve the heat dissipation of the active layer portion. This results in improving the amount of light output of the semiconductor laser which is possible without causing optical damage. A method for making the device is also provided. This method permits achieving the above-noted advantages simply by adding an etching step to the conventional semiconductor laser fabrication process, without requiring special equipment or technique. |
| 公开日期 | 1997-03-04 |
| 申请日期 | 1994-07-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35051]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | NAKATSUKA, SHINICHI,UCHIDA, KENJI,SAGAWA, MISUZU,et al. Semiconductor laser device and a method for the manufacture thereof. US5608750. 1997-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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