Halbleiterlaserdiode
文献类型：专利
| 作者 | HASHIMOTO,JUN-ICHI; KATSUYAMA,TSUKURU; MURATA,MICHIO; YOSHIDA,ICHIRO |
| 发表日期 | 2002-07-18 |
| 专利号 | DE69524693T2 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES,LTD. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Halbleiterlaserdiode |
| 英文摘要 | A semiconductor laser diode which can be applied to optical fiber amplifiers to attain a high reliability and can generate light having a wavelength of about 1 mu m is provided. This semiconductor laser diode is formed on a GaAs substrate and has an active layer comprising a GaInAsP strained quantum well whose energy band gap is smaller than that of GaAs. Barrier layers each comprising GaInAsP whose band gap is greater than that of the active layer are bonded to the active layer through heterojunction. According to this structure, when the active layer and the barrier layers are grown, the amounts of supply of a Ga material and an In material can be controlled in a simple manner and a semiconductor laser diode having a high reliability can be realized. |
| 公开日期 | 2002-07-18 |
| 申请日期 | 1995-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35094]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES,LTD. |
| 推荐引用方式 GB/T 7714 | HASHIMOTO,JUN-ICHI,KATSUYAMA,TSUKURU,MURATA,MICHIO,et al. Halbleiterlaserdiode. DE69524693T2. 2002-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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