Surface-emitting laser device
文献类型：专利
| 作者 | LEE, BUN; BAEK, JONG-HYEOB; CHOI, SUNG-WOO; LEE, JIN-HONG |
| 发表日期 | 1999-03-16 |
| 专利号 | US5883911 |
| 著作权人 | INTELLECTUAL DISCOVERY CO. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface-emitting laser device |
| 英文摘要 | An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an InxGa1-xAs thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the InxGa1-xAs grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the InxGa1-xAs thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same. |
| 公开日期 | 1999-03-16 |
| 申请日期 | 1996-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35162]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTELLECTUAL DISCOVERY CO. LTD. |
| 推荐引用方式 GB/T 7714 | LEE, BUN,BAEK, JONG-HYEOB,CHOI, SUNG-WOO,et al. Surface-emitting laser device. US5883911. 1999-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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