Method of separating semiconductor devices
文献类型：专利
| 作者 | YAMAMOTO, MASAHIRO; FUJIMOTO, HIDETOSHI |
| 发表日期 | 1999-11-30 |
| 专利号 | US5994205 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of separating semiconductor devices |
| 英文摘要 | A top surface of a wafer, at which semiconductor devices are formed, is bonded to an auxiliary plate by means of a first wax. In a state where the auxiliary plate is bonded to a polishing jig by means of a second wax, a bottom surface of the wafer, at which a sapphire substrate is provided, is polished. The second wax is melted and the auxiliary plate is removed from the polishing jig. In this state, scribe lines are formed in the bottom surface of the wafer according to a device separation pattern. Then, the bottom surface of the wafer is attached to an adhesive sheet, following which the first wax is melted and the wafer is removed from the auxiliary plate 105. Subsequently, the adhesive sheet is extended and the wafer is divided into the devices along the scribe lines. |
| 公开日期 | 1999-11-30 |
| 申请日期 | 1998-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35230]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, MASAHIRO,FUJIMOTO, HIDETOSHI. Method of separating semiconductor devices. US5994205. 1999-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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