Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
文献类型：专利
| 作者 | CHIEN, FEN-REN; HAASE, MICHAEL A.; MILLER, THOMAS J. |
| 发表日期 | 2002-04-23 |
| 专利号 | US6376273 |
| 著作权人 | EM INNOVATIVE PROPERTIES COMPANY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device |
| 英文摘要 | A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact. |
| 公开日期 | 2002-04-23 |
| 申请日期 | 1998-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35244]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EM INNOVATIVE PROPERTIES COMPANY |
| 推荐引用方式 GB/T 7714 | CHIEN, FEN-REN,HAASE, MICHAEL A.,MILLER, THOMAS J.. Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device. US6376273. 2002-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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