Semiconductor devices and methods with tunnel contact hole sources
文献类型：专利
| 作者 | HOLONYAK NICK JR.; WIERER JONATHAN J.; EVANS PETER W. |
| 发表日期 | 2005-02-22 |
| 专利号 | CA2297037C |
| 著作权人 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor devices and methods with tunnel contact hole sources |
| 英文摘要 | Semiconductor devices and methods are disclosed in which the amount of p-type material can be minimized, with attendant advantages in electrical, thermal, and optical performance, and in fabrication. A form of the disclosure is did to a generally planar semiconductor device wherein a layer of p-type semiconductor material (122, 119, 126) is disposed over a layer of n-type semiconductor material (105, 107, 110), and an electric potential is coupled between the p-type layer and the n-type layer, and wherein current in the device that is lateral to the plane of the layers is coupled into the p-type layer. A tunnel junction is adjacent the p-type layer for converting the lateral current into hole current. In an embodiment of this form of the disclosure, the tunnel junction is as an n+/p+ (132, 131) junction oriented with the p+ (131) portion thereof adjacent the p-type layer. The lateral current can be electron current in the n+ layer (132) and/or electron current in a further layer of n-type material disposed over the tunnel junction. |
| 公开日期 | 1999-02-04 |
| 申请日期 | 1998-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35249]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
| 推荐引用方式 GB/T 7714 | HOLONYAK NICK JR.,WIERER JONATHAN J.,EVANS PETER W.. Semiconductor devices and methods with tunnel contact hole sources. CA2297037C. 2005-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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