Semiconductor laser with a rewritable wavelength stabilizer
文献类型:专利
作者 | LINKE, RICHARD A.; YAMADA, HIROHITO |
发表日期 | 2002-03-26 |
专利号 | US6363097 |
著作权人 | NEC CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser with a rewritable wavelength stabilizer |
英文摘要 | A semiconductor laser with a rewritable wavelength stabilizer which comprises a laser mirror made of a grating written into a photorefractive material, in which the oscillation wavelength of the laser diode is determined by the period of the grating. This allows the refractive index of the grating to be changed by illuminating the photorefractive material after cooling thereof to a temperature at which most of the doped impurities form DX centers. The grating can be erased by heating the photorefractive material to a temperature at which most DX centers are ionized, which erases the grating. Thereafter the photorefractive material is cooled again to a temperature at which most impurities become DX centers, and a new grating can be written in the photorefractive material. The wavelength of the semiconductor laser can be changed repeatedly by erasing and rewriting the grating therein. The laser diode is maintained and operated at a low temperature to maintain the grating semi-permanently therein while the temperature remains low. |
公开日期 | 2002-03-26 |
申请日期 | 1998-09-18 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/35258] |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORPORATION |
推荐引用方式 GB/T 7714 | LINKE, RICHARD A.,YAMADA, HIROHITO. Semiconductor laser with a rewritable wavelength stabilizer. US6363097. 2002-03-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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