Method for nitride based laser diode with growth substrate removed
文献类型：专利
| 作者 | KNEISSL, MICHAEL A.; BOUR, DAVID P.; MEI, PING; ROMANO, LINDA T. |
| 发表日期 | 2002-09-10 |
| 专利号 | US6448102 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for nitride based laser diode with growth substrate removed |
| 英文摘要 | A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after a thermally conducting substrate has been bonded to the side opposite the sapphire substrate. |
| 公开日期 | 2002-09-10 |
| 申请日期 | 1999-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35288]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | KNEISSL, MICHAEL A.,BOUR, DAVID P.,MEI, PING,et al. Method for nitride based laser diode with growth substrate removed. US6448102. 2002-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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