Multi-layer semiconductor devices with stress-relief profiles
文献类型：专利
| 作者 | SRINIVASAN, SWAMINATHAN; PATEL, RUSHIKESH M. |
| 发表日期 | 2001-01-23 |
| 专利号 | US6178189 |
| 著作权人 | OPTO POWER CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multi-layer semiconductor devices with stress-relief profiles |
| 英文摘要 | Multi-layer, semiconductor devices are configured to reduce stress by the removal of much of the structure which does not actually contribute to device performance. In one embodiment, trough between mesas which define light emitting facets in a laser diode bar are etched well into the substrate to remove all layers of different compositions there. In another embodiment, troughs are also etched in the backside of the substrate of a laser diode structure where the troughs are aligned along axes perpendicular to the axes of the mesas. The removal of stress permits more accurate alignment of the multiple facets along a single axis when the laser bar is bonded to a heat sink. The accurate alignment minimizes the placement constraints on the position of a microlens for achieving maximum power output and coupling efficiency for optical fibers coupled to the microlens. |
| 公开日期 | 2001-01-23 |
| 申请日期 | 1999-05-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35294]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTO POWER CORPORATION |
| 推荐引用方式 GB/T 7714 | SRINIVASAN, SWAMINATHAN,PATEL, RUSHIKESH M.. Multi-layer semiconductor devices with stress-relief profiles. US6178189. 2001-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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