Halbleiterlaser, Halbleitervorrichtung und Herstellungsverfahren
文献类型：专利
| 作者 | ASANO, TAKEHARU; ASATSUMA, TSUNENORI; HINO, TOMONORI; KOBAYASHI, TAKASHI; TOMIYA, SHIGETAKA; YAMAGUCHI, TAKASHI |
| 发表日期 | 2006-04-06 |
| 专利号 | DE69923919T2 |
| 著作权人 | SONY CORP. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Halbleiterlaser, Halbleitervorrichtung und Herstellungsverfahren |
| 英文摘要 | In a semiconductor laser made of nitride III-V compound semiconductors and having a ridge-shaped stripe, which is capable of stably controlling transverse modes to prevent high-order mode oscillation during high output power and excellent in heat dissipation, opposite sides of the ridge are buried by a buried semiconductor layer such as AlGaN buried layer made of a nitride III-V compound semiconductor at least of which is a non-single crystal such as polycrystal. The buried semiconductor layer is grown under a growth temperature in the range from 520 DEG C to 760 DEG C. |
| 公开日期 | 2006-04-06 |
| 申请日期 | 1999-11-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35325]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP. |
| 推荐引用方式 GB/T 7714 | ASANO, TAKEHARU,ASATSUMA, TSUNENORI,HINO, TOMONORI,et al. Halbleiterlaser, Halbleitervorrichtung und Herstellungsverfahren. DE69923919T2. 2006-04-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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