Distributed feedback type semiconductor laser device and method of manufacturing the same
文献类型：专利
| 作者 | FUNABASHI, MASAKI; KASUKAWA, AKIHIKO |
| 发表日期 | 2004-01-06 |
| 专利号 | US6674783 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Distributed feedback type semiconductor laser device and method of manufacturing the same |
| 英文摘要 | Disclosed are a gain coupled distributed feedback type semiconductor laser device which has a high single-mode yield and a smaller variation in the oscillation threshold current and luminous efficiency, and a method of manufacturing the same. The semiconductor laser device has a gain or loss which periodically changes, and comprises a cavity; and a diffraction grating formed in the cavity in such a way that an absolute value of a gain coupling coefficient in a vicinity of at least one of facets of the cavity is smaller than an absolute value of a gain coupling coefficient in the other area. |
| 公开日期 | 2004-01-06 |
| 申请日期 | 2000-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35341]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | FUNABASHI, MASAKI,KASUKAWA, AKIHIKO. Distributed feedback type semiconductor laser device and method of manufacturing the same. US6674783. 2004-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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