Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof
文献类型：专利
| 作者 | ASANO, TAKEHARU; IKEDA, MASAO; TOJO, TSUYOSHI; TOMIYA, SHIGETAKA |
| 发表日期 | 2003-06-10 |
| 专利号 | US6577662 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof |
| 英文摘要 | In a semiconductor laser having a ridge-shaped stripe and made of nitride III-V compound semiconductors, opposite sides of the ridge are buried with a buried semiconductor layer of Al.sub.xGa.sub.1-x As (0<.times..ltoreq.1), (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq..times..ltoreq.1, 0.ltoreq.y.ltoreq.1) or Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq..times..ltoreq.1, 0.ltoreq.y.ltoreq.1) to stably control transverse modes, thereby minimizing higher mode oscillation during a high power output, and improving the heat dissipation property. |
| 公开日期 | 2003-06-10 |
| 申请日期 | 2000-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35345]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | ASANO, TAKEHARU,IKEDA, MASAO,TOJO, TSUYOSHI,et al. Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof. US6577662. 2003-06-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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