Semiconductor laser device with wavelength selection and high-frequency modulation of driving current
文献类型：专利
| 作者 | SONODA, SHINICHIRO |
| 发表日期 | 2004-01-13 |
| 专利号 | US6678306 |
| 著作权人 | FUJIFILM CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device with wavelength selection and high-frequency modulation of driving current |
| 英文摘要 | A semiconductor laser device includes a semiconductor laser element having a pair of cleavage planes which allows laser oscillation therebetween in a plurality of Fabry-Perot modes, an external resonator being coupled to the semiconductor laser element and including a wavelength selection element which has a passband including more than one wavelength of more than one Fabry-Perot mode out of the plurality of Fabry-Perot modes, and a high-frequency superimposing unit which superimposes a high-frequency current on a driving current of the semiconductor laser element. |
| 公开日期 | 2004-01-13 |
| 申请日期 | 2000-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35349]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIFILM CORPORATION |
| 推荐引用方式 GB/T 7714 | SONODA, SHINICHIRO. Semiconductor laser device with wavelength selection and high-frequency modulation of driving current. US6678306. 2004-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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