Gain-coupled distributed-feedback semiconductor laser device
文献类型：专利
| 作者 | FUNABASHI, MASAKI; KASUKAWA, AKIHIKO |
| 发表日期 | 2004-03-09 |
| 专利号 | US6704342 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gain-coupled distributed-feedback semiconductor laser device |
| 英文摘要 | A gain-coupled DFB semiconductor laser device has a resonator and a diffraction grating which feeds-back the emission from the resonator to increase wavelength selectively. The gain-coupled coefficient kappag and the length Lg of the diffraction grating satisfy the following relationship:The yield rate of the DFB laser device with respect to the single-longitudinal mode lasing characteristic is improved. |
| 公开日期 | 2004-03-09 |
| 申请日期 | 2000-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35370]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | FUNABASHI, MASAKI,KASUKAWA, AKIHIKO. Gain-coupled distributed-feedback semiconductor laser device. US6704342. 2004-03-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。