Semiconductor laser device and semiconductor laser module using the same
文献类型：专利
| 作者 | YOSHIDA, JUNJI; TSUKIJI, NAOKI; IKETANI, AKIRA; KIMURA, NAOKI; NIEKAWA, JUN; KIMURA, TOSHIO; AIKIYO, TAKESHI |
| 发表日期 | 2003-05-20 |
| 专利号 | US6567447 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and semiconductor laser module using the same |
| 英文摘要 | In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 mum but equal to or smaller than 1800 mum, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 5 nm or less is formed on an optical fiber to be built in. |
| 公开日期 | 2003-05-20 |
| 申请日期 | 2000-10-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35371]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOSHIDA, JUNJI,TSUKIJI, NAOKI,IKETANI, AKIRA,et al. Semiconductor laser device and semiconductor laser module using the same. US6567447. 2003-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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