Complex coupling MQW semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI, HIROHIKO; ISHIKAWA, TSUTOMU; SHOJI, HAJIME |
| 发表日期 | 2005-02-01 |
| 专利号 | US6850550 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Complex coupling MQW semiconductor laser |
| 英文摘要 | A method of manufacturing a distributed feedback semiconductor laser, has the steps of: growing on a semiconductor substrate a lamination of alternately stacked lower barrier layer and lower well layer having a band gap narrower than the lower barrier layer, to form a lower quantum well structure; growing an intermediate layer on an uppermost lower well layer, the intermediate layer having a band gap broader than the lower well and a thickness thicker than the lower barrier layer; growing on the intermediate layer a lamination of alternately stacked upper well layer and upper barrier layer having a band gap broader than the upper well layer and a thickness thinner than the intermediate layer, to form an upper quantum well structure; forming a mask on the upper quantum well structure, the mask having periodical pattern; by using the mask as an etching mask, etching the upper quantum well structure in a periodical shape by using the intermediate layer as an etching margin layer; and removing the mask. Complex coupling DFB lasers with a small variation in characteristics can be provided. |
| 公开日期 | 2005-02-01 |
| 申请日期 | 2001-03-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35396]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | KOBAYASHI, HIROHIKO,ISHIKAWA, TSUTOMU,SHOJI, HAJIME. Complex coupling MQW semiconductor laser. US6850550. 2005-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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